Please use this identifier to cite or link to this item:
https://ir.vidyasagar.ac.in/jspui/handle/123456789/729
Title: | Resonant Tunneling in Multibarrier Semiconductor Heterostructure in Relativistic Framework |
Authors: | Sinha, Santanu Bhattacharjee, S.P Mahapatra, P. K. |
Keywords: | Multibarrier resonant tunneling transmission coefficient surface state |
Issue Date: | 2007 |
Publisher: | Vidyasagar University , Midnapore , West-Bengal , India |
Series/Report no.: | Journal of Physical Science;Vol 11 [2007] |
Abstract: | A mathematical model based on relativistic approach is proposed for the determination of transmission coefficient within the energy range of ε <V0 , ε = V0 and ε >V0 for a multibarrier GaAs/Al y Ga1− y As heterostructure. The effect of number of barriers and number of cells in the well and barrier regions on the resonant energies are studied in detail. An additional resonant peak in resonant energy spectrum indicated the presence of a new surface state. |
Description: | 99-112 |
URI: | http://inet.vidyasagar.ac.in:8080/jspui/handle/123456789/729 |
ISSN: | 0972-8791 (Print) |
Appears in Collections: | Journal of Physical Sciences Vol.11 [2007] |
Files in This Item:
File | Description | Size | Format | |
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JPS-1112.pdf | 277.8 kB | Adobe PDF | View/Open |
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