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https://ir.vidyasagar.ac.in/jspui/handle/123456789/729Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sinha, Santanu | |
| dc.contributor.author | Bhattacharjee, S.P | |
| dc.contributor.author | Mahapatra, P. K. | |
| dc.date.accessioned | 2016-12-22T17:05:16Z | - |
| dc.date.available | 2016-12-22T17:05:16Z | - |
| dc.date.issued | 2007 | |
| dc.identifier.issn | 0972-8791 (Print) | |
| dc.identifier.uri | http://inet.vidyasagar.ac.in:8080/jspui/handle/123456789/729 | - |
| dc.description | 99-112 | en_US |
| dc.description.abstract | A mathematical model based on relativistic approach is proposed for the determination of transmission coefficient within the energy range of ε <V0 , ε = V0 and ε >V0 for a multibarrier GaAs/Al y Ga1− y As heterostructure. The effect of number of barriers and number of cells in the well and barrier regions on the resonant energies are studied in detail. An additional resonant peak in resonant energy spectrum indicated the presence of a new surface state. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | Vidyasagar University , Midnapore , West-Bengal , India | en_US |
| dc.relation.ispartofseries | Journal of Physical Science;Vol 11 [2007] | |
| dc.subject | Multibarrier resonant tunneling | en_US |
| dc.subject | transmission coefficient | en_US |
| dc.subject | surface state | en_US |
| dc.title | Resonant Tunneling in Multibarrier Semiconductor Heterostructure in Relativistic Framework | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Journal of Physical Sciences Vol.11 [2007] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| JPS-1112.pdf | 277.8 kB | Adobe PDF | View/Open |
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