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https://ir.vidyasagar.ac.in/jspui/handle/123456789/853| Title: | Electrical and Chemical Characteristics of Ta2O5 Gate Dielectrics on Ge-rich SiGe Heterolayers |
| Authors: | Das, R Saha, S |
| Keywords: | Constant Current Stressing Ge-rich SiGe High-k dielectrics (Ta2O5) and XPS |
| Issue Date: | 2012 |
| Publisher: | Vidyasagar University , Midnapore , West-Bengal , India |
| Series/Report no.: | Journal of Physical Science;Vol 16 [2012] |
| Abstract: | The charge trapping/detrapping behavior in ultra-thin tantalum pentoxide oxide (Ta2O5, equivalent oxide thickness ~1.76 nm) is presented under constant current stressing (CCS, 0.255 to 1.02 C. cm−2). The Ta2O5 film have been deposited on Ge-rich SiGe (Ge~85%) heterolayers using tantalum pentaethoxide [Ta(OC2H5)5] as an organometallic source at low temperature (~150 °C) by plasma enhanced chemical vapor deposition (PECVD) technique. The surface chemical states of Ta2O5 film has been analyzed by X-ray photo electron spectroscopy (XPS). Fixed oxide charge density (Qf/q) have been studied in constant current stressing. |
| Description: | 177-184 |
| URI: | http://inet.vidyasagar.ac.in:8080/jspui/handle/123456789/853 |
| ISSN: | 0972-8791 (Print) |
| Appears in Collections: | Journal of Physical Sciences Vol.16 [2012] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| JPS-V16-18.pdf | 300.94 kB | Adobe PDF | View/Open |
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